inchange semiconductor isc product specification isc silicon pnp power transistor MJ15012 description excellent safe operating area dc current gain- : h fe = 20(min.)@i c = -2a collector-emitter saturation voltage- : v ce(sat )= -2.5v(max)@ i c = -4a complement to type mj15011 applications designed for high power audio, disk head positioners , and other linear applications. t hese devices can also be used in power switching circuits su ch as relay or solenoid drivers, dc-dc converters or inverters. absolute maximum ratings(t a =25 ) symbol parameter value unit v ceo(sus) collector-emitter voltage -250 v v cex collector-emitter voltage -250 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current-continuous -2 a i bm base current-peak -5 a i e emitter current-continuous 12 a i em emitter current-peak 20 a p d total power dissipation@t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJ15012 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -0.1a ;i b = 0 b -250 v v ce (sat)-1 collector-emitter saturation voltage i c = -2a; i b = -0.2a b -0.8 v v ce (sat)-2 collector-emitter saturation voltage i c = -4a; i b = -0.4a b -2.5 v v be (on) base-emitter on voltage i c = -4a ; v ce = -2v -2.0 v i ceo collector cutoff current v ce = -200v; i b = 0 -1.0 ma i cex collector cutoff current v ce = -250v;v be( off ) = 1.5v -0.5 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.5 ma h fe-1 dc current gain i c = -2a ; v ce = -2v 20 100 h fe-2 dc current gain i c = -4a ; v ce = -2v 5 c ob output capacitance i e = 0 ; v cb = -10v; f test = 1.0mhz 750 pf isc website www.iscsemi.cn
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